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NST3906F3T5G PNP General Purpose Transistor
The NST3906F3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium.
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COLLECTOR 3 1 BASE 2 EMITTER NST3906F3T5G Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc
1 2 3
* * * *
hFE, 100-300 Low VCE(sat), 0.4 V Reduces Board Space This is a Pb-Free Device
MAXIMUM RATINGS
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RYJL (Note 2) TJ, Tstg Max 290 2.3 432 347 2.8 360 143 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C/W C
SOT-1123 CASE 524AA STYLE 1
MARKING DIAGRAM
3M 3 M = Device Code = Date Code
ORDERING INFORMATION
Device NST3906F3T5G Package Shipping SOT-1123 8000/Tape & Reel (Pb-Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1
Publication Order Number: NST3906F3/D
NST3906F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX -40 -40 -5.0 - - - - -50 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE - 60 80 100 60 30 - - -0.65 - - - 300 - - Vdc -0.25 -0.4 Vdc -0.85 -0.95
VCE(sat)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = -5.0 V, IE = 0 mA, f = 1.0 MHz) Input Capacitance (VEB = -0.5 V, IE = 0 mA, f = 1.0 MHz) Noise Figure (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 kW, f = 1.0 kHz) fT Cobo Cibo NF 250 - - - - 4.5 10.0 4.0 MHz pF pF dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = -1.0 mAdc) td tr ts tf - - - - 35 35 250 50 ns
ns
3. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. 0.40 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat) = 150C hFE, DC CURRENT GAIN (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 -55C 25C IC/IB = 10 350 300 250 200 150 100 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 150C (1.0 V) 25C (5.0 V) 25C (1.0 V) -55C (5.0 V) -55C (1.0 V)
150C (5.0 V)
Figure 1. Collector Emitter Saturation Voltage vs. Collector Current
Figure 2. DC Current Gain vs. Collector Current
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NST3906F3T5G
1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) IC/IB = 10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150C 0.3 0.0001 0.001 0.01 0.1 1 25C VCE = 2.0 V
-55C
-55C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Collector Current
1.0 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 mA IC = 10 mA 0.0001 0.001 Ib, BASE CURRENT (A) 0.01 100 mA Cibo, INPUT CAPACITANCE (pF) 80 mA 60 mA 40 mA 9.0 8.0 7.0 6.0 5.0 4.0 3.0
Figure 4. Base Emitter Turn-On Voltage vs. Collector Current
Cib
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
6.0 Cobo, OUTPUT CAPACITANCE (pF) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Cob 0 5.0 10 15 20 25
Figure 6. Input Capacitance
30
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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NST3906F3T5G
PACKAGE DIMENSIONS
SOT-1123 CASE 524AA-01 ISSUE A
b1
1 2
D
-X- -Y-
3
E b 0.08 (0.0032) X Y A
e
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b b1 c D E e HE L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 0.95 1.00 1.05 0.05 0.10 0.15 INCHES NOM 0.015 0.008 0.006 0.005 0.031 0.024 0.014 0.037 0.039 0.002 0.004 MIN 0.013 0.006 0.004 0.003 0.030 0.022 MAX 0.016 0.010 0.008 0.007 0.033 0.026 0.041 0.006
c
L HE
SOLDERING FOOTPRINT*
0.35 0.30
STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR
0.25 0.90 0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NST3906F3/D

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